BC350 transistor (pnp) features power dissipation p cm : 0.3 w (tamb=25 ) collector current i cm : -0.1 a collector-base voltage v (br)cbo: -50 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= -100a, i e =0 -50 v collector-emitter breakdown voltage v (br)ceo i c = -1ma, ib=0 -45 v emitter-base breakdown voltage v (br)ebo i e = -100a, i c =0 -5 v collector cut-off current i cbo v cb =-50v, i e =0 -0.1 a collector cut-off current i ceo v ce =-35v, i b =0 -0.1 a emitter cut-off current i ebo v eb = -3v, i c =0 -0.1 a dc current gain h fe v ce =-5 v, i c = -2ma 40 450 collector-emitter saturation voltage v cesat i c = -10ma, i b = -1ma -0.3 v base-emitter saturation voltage v besat i c = -10ma, i b = -1ma -1 v transition frequency f t v ce =-5v,i c =-10ma, f=30mhz 125 mhz 1 2 3 to-92 1. emitter 2. base 3. collector b c350 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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